| PART |
Description |
Maker |
| 27C2100-70 |
2M-BIT [256Kx8/128x16] CMOS EPROM
|
Macronix International Co., Ltd.
|
| MX27L2000T2I-25 MX27L2000T2I-20 MX27L2000T3I-15 MX |
XO 33.3333MHZ 50PPM 3.3V SMD-7050 TR-7-PL
CAP 10UF 25V 10% TANT RAD.10 TR-14
LT Series Water Resistant Linear Position Transducer, 50,8 mm [2.0 in] Electrical Travel, 1.0 % Linearity, Cable Termination, Item Number F58000202
null2M-BIT [256Kx8] CMOS EPROM 256K X 8 OTPROM, 120 ns, PDSO32
OSCILLATOR 24.576MHZ SMD 256K X 8 OTPROM, 150 ns, PDSO32
null2M-BIT [256Kx8] CMOS EPROM 256K X 8 OTPROM, 200 ns, PDSO32
|
Macronix International Co., Ltd.
|
| 27L2000-15 27L2000-25 27L2000-12 27L2000-20 27L200 |
2M-BIT [256Kx8] CMOS EPROM
|
Macronix International Co., Ltd.
|
| MX29F200CBMI-70G MX29F200CBMI-90 MX29F200CBTI-70G |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
| EDI88257CA EDI88257CA/LPA-C |
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时05555ns
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时055555ns
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs Corporation
|
| N02M083WL1AN-70I N02M083WL1A N02M083WL1AD N02M083W |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N02M0818L1 N02M0818L1AN-85I N02M0818L1A N02M0818L1 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| BS62LV2006TI BS62LV2006TIG55 BS62LV2006TIG70 BS62L |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
Asynchronous 2M(256Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
ETC
BSI[Brilliance Semiconductor]
|
| K6F2008S2E-F K6F2008S2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM68FS2000 |
256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M38023E7 M38022E3 M38021E2 M38025M2 M38025M1 M3802 |
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
1-Ch. 10-Bit 1.25 MSPS ADC 8-Ch., DSP/SPI, Hardware Configurable, Low Power 24-SOIC -40 to 85
TRANS PREBIASED NPN 200MW SOT-23
Screwless Socket Brdg.(50 pk)
8-BIT SINGLE-CHIP MICROCOMPUTER
R1 单芯位CMOS微机
Single Output LDO, 500mA, Fixed(2.5V), Tight Output Accuracy of 2%, Thermal Overload Protection 20-TSSOP 0 to 125 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Single Chip 8-Bit CMOS Microcomputer
Single Chip 8-bit Microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Sem...
http://
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
